Characteristics of thermal oxides grown on GaAs1 − xPx

摘要: Abstract Oxides were thermally grown on GaAs1 − xPx of various mole fractions x using dry oxygen or steam at temperatures. The elemental composition the oxide films as a function depth was examined ion microprobe mass analysis. Our results indicated that layers arsenic deficient through bulk and rich near oxide-semiconductor interface region. Capacitance-voltage (C-V) characteristics metal-insulator-semiconductor (MIS) capacitor structures displayed deep depletion behavior typically observed with wide band gap semiconductor MIS devices. also exhibited hysteretic nature indicative electron trapping interface. trap densities estimated from analysis C-V in range (5−9) × 1011 cm-2 eV-1. Post-oxidation annealing argon nitrogen generally resulted increased dielectric leakage current reduced hysteresis effects. correlation electrical data demonstrates important role determining properties