Simulation study of the origin of the 2DEG in isolated Al/sub x/Ga/sub 1-x/N/GaN heterostructures
作者： J.A. Casao Perez
DOI: 10.1109/SCED.2005.1504339
关键词: Schrödinger equation 、 Poisson's equation 、 Heterojunction 、 Physics 、 Charge (physics) 、 Condensed matter physics 、 Wide-bandgap semiconductor 、 Surface states
摘要: The significance of the surface states in isolated Al/sub x/Ga/sub 1-x/N/GaN heterostructures is investigated. A model based on a self-consistent solution Schrodinger, Poisson and charge balance equations presented. results obtained for 2DEG density potential agree well with theoretical experimental data already published (Jogai, 2002 Smorchkova et al., 2001).
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