Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN

摘要: In this article, the first calculations of hole initiated interband impact ionization in bulk zincblende and wurtzite phase GaN are presented. The calculations are made using an ensemble Monte Carlo simulation including the full details of all of the relevant valence bands, derived from an empirical pseudopotential approach, for each crystal type. The model also includes numerically generated hole initiated impact ionization transition rates, calculated based on the pseudopotential band structure. The calculations predict that both …