Principles of Chemical Etching — The Art and Science of Etching Crystals

作者: Robert B. Heimann

DOI: 10.1007/978-3-642-68765-5_3

关键词: Burgers vectorReaction rateCrystalChemical physicsIsotropic etchingChemical attackSolid surfaceMaterials scienceLattice defectsEtching (microfabrication)

摘要: The rate of reaction a solution with solid surface can depend distinctly on the crystallographic orientation reacting surfaces. This dependence is basis “etching”, which then understood as intentional utilization specific chemical attack in order to reveal crystal symmetries and lattice defects.

参考文章(119)
John J. Gilman, The art and science of growing crystals Wiley. ,(1963)
J. E. Burke, Progress in ceramic science Macmillan Co. , Pergamon Press. ,(1963)
B. Schwartz, H. Robbins, Chemical Etching of Silicon IV . Etching Technology Journal of The Electrochemical Society. ,vol. 123, pp. 1903- 1909 ,(1959) , 10.1149/1.2132721
G. I. Parisi, S. E. Haszko, G. A. Rozgonyi, Tapered Windows in SiO2: The Effect of NH 4 F : HF Dilution and Etching Temperature Journal of The Electrochemical Society. ,vol. 124, pp. 917- 921 ,(1977) , 10.1149/1.2133453
P. van der Putte, W.J.P. van Enckevort, L.J. Giling, J. Bloem, Surface morphology of HCl etched silicon wafers Journal of Crystal Growth. ,vol. 43, pp. 659- 675 ,(1978) , 10.1016/0022-0248(78)90145-8
Frank Reginald Nunes Nabarro, Theory of crystal dislocations Clarendon Press. ,(1967)
W. Kleber, Angewandte Gitterphysik : Behandlung der Eigenschaften kristallisierter Körper vom Standpunkte der Gittertheorie Zeitschrift Fur Naturforschung Section A-a Journal of Physical Sciences. ,vol. 5, pp. 178- ,(1949) , 10.1515/9783111323008
S. Amklinckx, W. Bontinck, W. Dekeyser, Helical dislocations and spiral etch-pits Philosophical Magazine. ,vol. 2, pp. 1264- 1270 ,(1957) , 10.1080/14786435708244015
B. S. Shah, J. N. Sherwood, Lattice defects in plastic organic crystals. Part 6.—Dislocation etching in adamantane Trans. Faraday Soc.. ,vol. 67, pp. 1200- 1202 ,(1971) , 10.1039/TF9716701200