Macroscopic etch anisotropies and microscopic reaction mechanisms: a micromachined structure for the rapid assay of etchant anisotropy
作者： Rikard A. Wind , Melissa A. Hines
DOI: 10.1016/S0039-6028(00)00479-9
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摘要: Abstract A new technique for the rapid quantification of orientation-dependent etch rates, which uses micromachined test patterns and optical microscopy, has been developed. The etching silicon in KOH etchants with without isopropanol was studied. Etch rates measured this are good agreement conventionally rates. In most cases, rate anisotropies well described by a simple model that is based on step-flow etching. Kinetic Monte Carlo simulations were used to generate approximate morphologies etched surfaces. Vicinal Si(110) surfaces display unusual, some etchants; functional form anisotropy suggests morphological transition occurs these highly reactive faces. moderately concentrated solutions where readily soluble, suggest stabilizes
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