Interlayer Exchange Coupling and Perpendicular Magnetic Anisotropy in Co$_{40}$Fe$_{40}$B$_{20}$/MgO/Co$_{20}$Fe$_{60}$B$_{20}$ Tunnel Junction Structures
作者： Yi-Chien Weng , Chih-Wei Cheng , G. Chern
DOI: 10.1109/TMAG.2013.2245308
关键词: Materials science 、 Sputter deposition 、 Sputtering 、 Condensed matter physics 、 Antiferromagnetism 、 Annealing (metallurgy) 、 Tunnel junction 、 Ferromagnetism 、 Anisotropy energy 、 Coupling
摘要: We fabricated a series of Co40Fe40B20 (1.2 nm)/MgO(x nm)/Co20Fe60B20 nm), x = 0.9-1.5, by sputtering and found the presence interlayer-exchange-coupling (IEC), as function thickness MgO spacer, perpendicular magnetic anisotropy (PMA) after post annealing at 225°C. The coupling strength sign (corresponded to parallel or antiparallel coupling), which were characterized minor loop shift, varied depending upon layer thickness. In addition, energy constant (Ku) exchange (J) show inverse relation temperature varies in range 225°C-370°. increases while decreases from ferromagnetic antiferromagnetic increases. This effect seems be consistent with recent report theoretical calculation based on orange peel model. A comparison between experimental results model will given.
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sci-hub.se 参考文章(23)
F. Matsukura, H. Ohno, H. Gan, K. Miura, S. Ikeda, J. Hayakawa, K. Mizunuma, J. H. Park, H. Yamamoto, H. Hasegawa, MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers Applied Physics Letters. ,vol. 95, pp. 232516- ,(2009) , 10.1063/1.3265740
Chih-Wei Cheng, C. H. Shiue, Tsung-I Cheng, G. Chern, Observation of parallel-antiparallel magnetic coupling in ultrathin CoFeB-MgO based structures with perpendicular magnetic anisotropy Journal of Applied Physics. ,vol. 112, pp. 033917- ,(2012) , 10.1063/1.4745905
H. D. Gan, H. Sato, M. Yamanouchi, S. Ikeda, K. Miura, R. Koizumi, F. Matsukura, H. Ohno, Origin of the collapse of tunnel magnetoresistance at high annealing temperature in CoFeB/MgO perpendicular magnetic tunnel junctions Applied Physics Letters. ,vol. 99, pp. 252507- ,(2011) , 10.1063/1.3671669
Tsung-I Cheng, Chih-Wei Cheng, G. Chern, Perpendicular magnetic anisotropy induced by a cap layer in ultrathin MgO/CoFeB/Nb Journal of Applied Physics. ,vol. 112, pp. 033910- ,(2012) , 10.1063/1.4742195
Shinji Yuasa, Taro Nagahama, Akio Fukushima, Yoshishige Suzuki, Koji Ando, Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions Nature Materials. ,vol. 3, pp. 868- 871 ,(2004) , 10.1038/NMAT1257
J Moritz, F Garcia, J. C Toussaint, B Dieny, J. P Nozières, Orange peel coupling in multilayers with perpendicular magnetic anisotropy: Application to (Co/Pt)-based exchange-biased spin-valves EPL. ,vol. 65, pp. 123- 129 ,(2004) , 10.1209/EPL/I2003-10063-9
Shoun Matsunaga, Jun Hayakawa, Shoji Ikeda, Katsuya Miura, Haruhiro Hasegawa, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu, Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions Applied Physics Express. ,vol. 1, pp. 091301- ,(2008) , 10.1143/APEX.1.091301
Kenji Tsuchida, Tsuneo Inaba, Katsuyuki Fujita, Yoshihiro Ueda, Takafumi Shimizu, Yoshiaki Asao, Takeshi Kajiyama, Masayoshi Iwayama, Kuniaki Sugiura, Sumio Ikegawa, Tatsuya Kishi, Tadashi Kai, Minoru Amano, Naoharu Shimomura, Hiroaki Yoda, Yohji Watanabe, A 64Mb MRAM with clamped-reference and adequate-reference schemes international solid-state circuits conference. pp. 258- 259 ,(2010) , 10.1109/ISSCC.2010.5433948
J. Faure-Vincent, C. Tiusan, C. Bellouard, E. Popova, M. Hehn, F. Montaigne, A. Schuhl, Interlayer magnetic coupling interactions of two ferromagnetic layers by spin polarized tunneling Physical Review Letters. ,vol. 89, pp. 107206- ,(2002) , 10.1103/PHYSREVLETT.89.107206
Stuart S. P. Parkin, Christian Kaiser, Alex Panchula, Philip M. Rice, Brian Hughes, Mahesh Samant, See-Hun Yang, Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers Nature Materials. ,vol. 3, pp. 862- 867 ,(2004) , 10.1038/NMAT1256