MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers
作者： F. Matsukura , H. Ohno , H. Gan , K. Miura , S. Ikeda
DOI: 10.1063/1.3265740
关键词:
摘要: The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties MgO-barrier magnetic junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs CoFeB/MgO/Fe stack reached 67% at annealing temperature (Ta) 200 °C and then decreased rapidly Ta over 250 °C. degradation the may be related to crystallization CoFe(B) into fcc(111) bcc(011) texture resulting from diffusion B Pd layers. which were situ annealed 350 °C just after depositing bottom showed 78% by postannealing Ta=200 °C.
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S. Mangin, D. Ravelosona, J. A. Katine, M. J. Carey, B. D. Terris, Eric E. Fullerton, Current-induced magnetization reversal in nanopillars with perpendicular anisotropy Nature Materials. ,vol. 5, pp. 210- 215 ,(2006) , 10.1038/NMAT1595
Naoki Nishimura, Tadahiko Hirai, Akio Koganei, Takashi Ikeda, Kazuhisa Okano, Yoshinobu Sekiguchi, Yoshiyuki Osada, Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory Journal of Applied Physics. ,vol. 91, pp. 5246- 5249 ,(2002) , 10.1063/1.1459605
Young-suk Choi, Koji Tsunekawa, Significant reduction of coercivity without reduction of tunneling magnetoresistance ratio of CoFeB∕MgO∕CoFeB-based magnetic tunnel junction using sandwich-structured free layer Applied Physics Letters. ,vol. 91, pp. 172507- ,(2007) , 10.1063/1.2801703
Hideto Ohmori, Tomoya Hatori, Shigeki Nakagawa, Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature Journal of Applied Physics. ,vol. 103, pp. 07A911- ,(2008) , 10.1063/1.2840016
Fumihiro Matsukura, Hideo Ohno, Hiromasa Takahashi, Hiromasa Takahashi, Shoji Ikeda, Jun Hayakawa, Jun Hayakawa, Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperature Japanese Journal of Applied Physics. ,vol. 44, ,(2005) , 10.1143/JJAP.44.L587
Toyoo Miyajima, Takahiro Ibusuki, Shinjiro Umehara, Masashige Sato, Shin Eguchi, Mineharu Tsukada, Yuji Kataoka, Transmission electron microscopy study on the crystallization and boron distribution of CoFeB/MgO/CoFeB magnetic tunnel junctions with various capping layers Applied Physics Letters. ,vol. 94, pp. 122501- ,(2009) , 10.1063/1.3106624
Jeong-Heon Park, Chando Park, Taehee Jeong, Matthew T. Moneck, Noel T. Nufer, Jian-Gang Zhu, Co /Pt multilayer based magnetic tunnel junctions using perpendicular magnetic anisotropy Journal of Applied Physics. ,vol. 103, ,(2008) , 10.1063/1.2838754
Shinji Yuasa, Yoshishige Suzuki, Toshikazu Katayama, Koji Ando, Characterization of growth and crystallization processes in CoFeB /MgO/CoFeB magnetic tunnel junction structure by reflective high-energy electron diffraction Applied Physics Letters. ,vol. 87, pp. 242503- ,(2005) , 10.1063/1.2140612
S. V. Karthik, Y. K. Takahashi, T. Ohkubo, K. Hono, S. Ikeda, H. Ohno, Transmission electron microscopy investigation of CoFeB/MgO/CoFeB pseudospin valves annealed at different temperatures Journal of Applied Physics. ,vol. 106, pp. 023920- ,(2009) , 10.1063/1.3182817
Y. M. Lee, J. Hayakawa, S. Ikeda, F. Matsukura, H. Ohno, Giant tunnel magnetoresistance and high annealing stability in CoFeB∕MgO∕CoFeB magnetic tunnel junctions with synthetic pinned layer Applied Physics Letters. ,vol. 89, pp. 042506- ,(2006) , 10.1063/1.2234720