Current-induced magnetization reversal in nanopillars with perpendicular anisotropy
作者： S. Mangin , D. Ravelosona , J. A. Katine , M. J. Carey , B. D. Terris
DOI: 10.1038/NMAT1595
关键词:
摘要: Devices that show a magnetic anisotropy normal to the film surface hold great promise towards faster and smaller bits in data-storage applications. We describe an experimental demonstration of current-induced reversal nanopillars with perpendicular high coercive fields. The best results are observed for Co/Ni multilayers, which have higher giant magnetoresistance values spin-torque efficiencies than Co/Pt multilayers. reference layers were designed significantly allowing complete current–field phase diagram free-layer be explored. compared micromagnetic modelling free layer that, depending on bias current applied field, details regions irreversible switching, coherent incoherent spin waves, or static non-uniform magnetization states. This ability manipulate high-anisotropy elements could prove useful range spintronic
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