Performance enhancement of pentacene and F16CuPc-based low-voltage devices using cross-linked blend gate dielectrics

摘要: Herein is reported the fabrication and systematic comparative analysis of low-voltage organic filed-effect transistors (OFETs) inverters using bare ZrOx dielectrics inorganic–organic hybrid CZB (cross-linked ZrOx/1,6-bis(trimethoxysily)hexane blend) dielectrics. Solution-processed sol–gel chemistry was employed to prepare gate Two active layers p-type pentacene n-type copper hexadecafluorophthalocyanine (F16CuPc) were deposited on neutral cluster beam deposition method. Compared with ZrOx-based inverters, CZB-based devices low leakage current high capacitance exhibited significantly higher hole electron carrier mobilities (0.12 → 1.03) (1.3  ×  10−3 → 4.9  ×  10−3) cm2 (Vs)−1, respectively, enhanced gains (9.4 → 13.3), together large output voltage swings sharp inversions in transfer characteristics (VTCs). The also improved noise margins due gain better symmetry VTCs compared their counterparts. results indicate that basis electrical properties growth high-quality crystalline semiconducting films dielectric surfaces, such high-performance operating at levels are promising potential components for integrated circuits.