Low-voltage bendable pentacene thin-film transistor with stainless steel substrate and polystyrene-coated hafnium silicate dielectric.
作者： Dong-Jin Yun , Seunghyup Lee , Kijung Yong , Shi-Woo Rhee
DOI: 10.1021/AM300005S
关键词:
摘要: The hafnium silicate and aluminum oxide high-k dielectrics were deposited on stainless steel substrate using atomic layer deposition process octadecyltrichlorosilane (OTS) polystyrene (PS) treated improve crystallinity of pentacene grown them. Besides, the effects condition morphologies, crystallinities electrical properties characterized. Therefore, surface treatment dielectric conditions optimized. coated at low rate temperature (0.2–0.3 A/s R.T.) showed largest grain size (0.8–1.0 μm) highest among pentacenes various conditions, TFT with excellent device-performance. To decrease threshold voltage TFT, polystyrene-thickness was controlled different concentration pol...
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sci-hub.se 参考文章(34)
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