Atomic layer deposition of hafnium silicate film for high mobility pentacene thin film transistor applications
作者： Seunghyup Lee , Dong-Jin Yun , Shi-Woo Rhee , Kijung Yong
DOI: 10.1039/B908216F
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摘要: The performance of pentacene thin film transistors (TFTs) was improved using a hafnium silicate (HfxSi1− xO2) thin film as a high-k dielectric layer. For growth of the HfxSi1− xO2 thin …
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