Transparent High‐Performance Thin Film Transistors from Solution‐Processed SnO2/ZrO2 Gel‐like Precursors

作者: Jaewon Jang , Rungrot Kitsomboonloha , Sarah L. Swisher , Eung Seok Park , Hongki Kang

DOI: 10.1002/ADMA.201202997

关键词: Solution processTransistorMaterials scienceThin-film transistorVoltageOptoelectronicsSolution processedSaturation (magnetic)DielectricSol-gel

摘要: This work employs novel SnO 2 gel-like precursors in conjunction with sol–gel deposited ZrO 2 gate dielectrics to realize high-performance transparent transistors. Representative …

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