Impact of Sn/Zn ratio on the gate bias and temperature-induced instability of Zn-In-Sn-O thin film transistors
作者： Min Ki Ryu , Shinhyuk Yang , Sang-Hee Ko Park , Chi-Sun Hwang , Jae Kyeong Jeong
DOI: 10.1063/1.3257726
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摘要: We investigated the effect of Sn/Zn ratio in amorphous Zn-In-Sn-O (ZITO) system on gate voltage stress-induced stability resulting thin film transistors (TFTs). The device TFTs with a composition channel Zn:In:Sn=0.35:0.20:0.45 (device C) was dramatically improved, while those devices Zn:In:Sn=0.45:0.20:0.35 and 0.40:0.20:0.40 suffered from deep level trap creation charge trapping, respectively. enhancement C can be attributed to its having lowest total density, which corroborated by superior temperature subthreshold current region range 298 398 K. Therefore, Sn atoms are believed act as stabilizer ZITO network, is similar role Ga In-Ga-Zn-O system.
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