作者: Min Li , Jiawei Pang , Dongxiang Luo , Jianhua Zou , Hong Tao
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摘要: In this study, we propose an amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) based on homojunctioned structure and investigate the modification of source/drain (SD) region effect device performance. It is shown that conductive characteristic SD contact fabricated by self-aligning through bask-side exposure does rest upon following passivation deposition procedure. By optimizing architecture plasma-enhanced chemical vapor (PECVD), TFT panel with possesses excellent uniformity, negligible short-channel effect, outstanding stability against environmental storage thermal/light electrical stress. Owning to its easy fabrication prominent performance, firmly believe in competitiveness future matrix backplanes.