Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal- Oxide (EMMO) Thin-Film Transistors
作者： Nannan Lv , Lei Lu , Zening Wang , Huaisheng Wang , Dongli Zhang
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摘要: Characteristics of amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) are highly dependent on the hydrogen (H) content within device architecture, for example in etch-stop layer (ESL) elevated-metal metal-oxide (EMMO) TFTs. The serious apparent “short-channel effect (SCE)” was caused by H diffusion from source/drain (S/D) to channel. Such SCE deterioration can be suppressed thermal dehydrogenation at a cost long annealing time, especially transistor architecture with a-IGZO S/D covered H-rich silicon nitride (SiN x :H) and further capped metallic H-diffusion barrier. efficiency is found significantly enhanced fluorinating a-IGZO. By optimizing and/or fluorination process enhance dehydrogenation, efficiently eliminated well-maintained performance even ${2}~\mu \text{m}$ -long
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