9.3: Control of Threshold Voltage in Back Channel Etch Type Amorphous Indium Gallium Zinc Oxide Thin Film Transistors
作者： Seung Min Lee , Chang Il Ryoo , Jae Wook Park , Joonsoo Han , Dae-Won Kim
DOI: 10.1889/1.3621002
关键词:
摘要: Tuning the process pressure at deposition of passivation layers has been suggested in way controlling threshold voltage a-IGZO TFTs, making it possible to employ gate driver integration. It showed that Vth linearly changes with ΔVth/ΔPressure∼3.5V/100Pa. A 3.2 inch WVGA AMLCD integrated circuits were successfully demonstrated using enhancement mode BCE type bottom TFTs.
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