High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel: Combinatorial approach

作者: Min Ki Ryu , Shinhyuk Yang , Sang-Hee Ko Park , Chi-Sun Hwang , Jae Kyeong Jeong

DOI: 10.1063/1.3206948

关键词: Materials scienceThin filmSubthreshold conductionField-effect transistorThin-film transistorThreshold voltageSputter depositionOptoelectronicsAmorphous solidElectron mobility

摘要: … In this letter, we report on the fabrication of high performance gallium-free ZnInSnO TFTs. The optimal cation composition was determined via the combinatorial approach using the …

参考文章(20)
Minkyu Kim, Jong Han Jeong, Hun Jung Lee, Tae Kyung Ahn, Hyun Soo Shin, Jin-Seong Park, Jae Kyeong Jeong, Yeon-Gon Mo, Hye Dong Kim, High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper Applied Physics Letters. ,vol. 90, pp. 212114- ,(2007) , 10.1063/1.2742790
W. B. Jackson, R. L. Hoffman, G. S. Herman, High-performance flexible zinc tin oxide field-effect transistors Applied Physics Letters. ,vol. 87, pp. 193503- ,(2005) , 10.1063/1.2120895
M. G. McDowell, R. J. Sanderson, I. G. Hill, Combinatorial study of zinc tin oxide thin-film transistors Applied Physics Letters. ,vol. 92, pp. 013502- ,(2008) , 10.1063/1.2828862
Kenji Nomura, Hiromichi Ohta, Akihiro Takagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors Nature. ,vol. 432, pp. 488- 492 ,(2004) , 10.1038/NATURE03090
David Hong, Hai Q. Chiang, John F. Wager, Zinc tin oxide thin-film transistors via reactive sputtering using a metal target Journal of Vacuum Science & Technology B. ,vol. 24, ,(2006) , 10.1116/1.2345206
Jae‐Heon Shin, Ji‐Su Lee, Chi‐Sun Hwang, Sang‐Hee Ko Park, Woo‐Seok Cheong, Minki Ryu, Chun‐Won Byun, Jeong‐Ik Lee, Hye Yong Chu, None, Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors Etri Journal. ,vol. 31, pp. 62- 64 ,(2009) , 10.4218/ETRIJ.09.0208.0266
Hisato Yabuta, Masafumi Sano, Katsumi Abe, Toshiaki Aiba, Tohru Den, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo Hosono, High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering Applied Physics Letters. ,vol. 89, pp. 112123- ,(2006) , 10.1063/1.2353811
Jin-Seong Park, Jae Kyeong Jeong, Yeon-Gon Mo, Hye Dong Kim, Sun-Il Kim, Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment Applied Physics Letters. ,vol. 90, pp. 262106- ,(2007) , 10.1063/1.2753107