Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

摘要: Abstract In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive is gaining great interest due to its reduced content scarce element. Experimental data indicate that incorporation promotes creation oxygen vacancies, which results in a higher free carrier density. thin-film transistors effect leads off current and threshold voltage values. The field-effect mobility also strongly degraded, probably coulomb scattering by ionized defects. A post deposition annealing air reduces density vacancies improves orders magnitude. Finally, electrical characteristics fabricated have been analyzed estimate states gap layers. These measurements reveal clear peak located at 0.3 eV from conduction band edge could be attributed vacancies.