Scanning-tunneling-microscopy analysis of the charge-density-wave structure in NbSe3.
作者： J. Ren , M.-H. Whangbo
关键词: Tunnel effect 、 Electronic structure 、 Charge density wave 、 Density of states 、 Inorganic compound 、 Fermi level 、 Scanning tunneling microscope 、 Condensed matter physics 、 Fermi surface
摘要: {sup 93}Nb NMR and scanning-tunneling-microscopy (STM) studies lead to different conclusions on the question of which chains are involved in formation two charge-density waves (CDW's) NbSe{sub 3}. To resolve this conflict, we calculated STM images a single 3} layer analyzed local densities states (LDOS) Nb Se atoms vicinity Fermi level. The conflict arises from fact that measurements probe LDOS (Nb atoms, respectively) at Concerning responsible for CDW 3}, however, conclusion is appropriate because major character electrons level type-I -III chains.
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