Chapter 12 Intrinsic stress of epitaxial thin films and surface layers

摘要: Publisher Summary This chapter discusses intrinsic stress of epitaxial thin films and surface layers. Future application in nanoscale technology substantially tightens the demands on stability as well structural compositional integrity ultimately necessitates fabrication high quality single crystalline films. A preparation technique past that has proven its capability to meet standards was molecular beam epitaxy (MBE). Epitaxial layers are arranged coherently with a mismatched support—for example, substrate or bulk crystal, respectively, elastically strained, therefore state stress. In literature, two complementary approaches can be found investigate response misfit: (1) techniques, which determine strain by measuring interatomic distances (2) from bending support. Recently, scanning tunneling microscopy (STM) also contributed successfully investigation transmittance misfit during growth.