Study on the phase change material Cr-doped Sb3Te1 for application in phase change memory
作者： Yangyang Xia , Bo Liu , Qing Wang , Zhonghua Zhang , Sannian Song
DOI: 10.1016/J.JNONCRYSOL.2015.05.013
关键词: Crystal structure 、 Order of magnitude 、 Diffraction 、 Transmission electron microscopy 、 Materials science 、 Analytical chemistry 、 Doping 、 Crystallography 、 Phase-change memory 、 Chemical bond 、 Activation energy
摘要: Abstract The characteristics of Cr-doped Sb 3 Te 1 materials were investigated for application in phase change memory (PCM). crystalline temperature and activation energy films increase with the increasing content Cr doping. X-ray diffraction photoelectron spectra methods applied to analyze crystal structure chemical bonding character. It can be found that there are no new lattice structures appearing, element bonds during process. size grains decreases after doping into by analysis transmission electron microscopy images, which indicates localized infinitesimal area atoms. endurance PCM cell keeps 3 × 10 4 cycles applying SET operation pulse 1 V/100 ns RESET 2 V/30 ns resistance ratio two orders magnitude, reveals good performance low power consumption. 0.37 material is a potential candidate PCM.
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