A study on the crystallization behavior of Sn-doped amorphous Ge 2 Sb 2 Te 5 by ultraviolet laser radiation
作者： N. Bai , F.R. Liu , X.X. Han , Z. Zhu , F. Liu
DOI: 10.1016/J.APSUSC.2014.08.007
关键词: Crystallization 、 Crystallography 、 Binding energy 、 Amorphous solid 、 Fluence 、 Materials science 、 Laser 、 Raman spectroscopy 、 Analytical chemistry 、 Lattice constant 、 Ultraviolet
摘要: Abstract In this paper, the influence of Sn doping (0%, 8% and 14%) on crystallization Ge2Sb2Te5 was studied with aid an ultraviolet laser. The XRD analyses revealed that addition maintained NaCl-type structure after but expanded lattice parameter due to smaller atomic radii Ge replaced by Sn. Raman peaks (123, 150 110 cm−1) moved towards lower wavenumbers (118, 137 104 cm−1), which can be explained remarkable decrease binding energy from Ge–Te Sn–Te. A increase in optical contrast 15% 40% observed Sn-doped film both isothermal annealing laser radiance. While changed little for a fixed volume fraction sample variation fluence is attributed mechanism induced under different fluences same.
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