Optical Properties of Ge40Sb10Te50Bx (x=0-2) Films.

摘要: Phase-change optical recording media of the base composition Ge40Sb10Te50 with or without boron doping (0.3–1.1 at.%) were prepared by rf sputtering on Si(100) substrate at a film thickness 100 nm. Crystalline state was obtained subsequent annealing 300°C for 10 min. The structure study crystallized films showed that lattice parameter fcc phase increases slightly B doping. Crystallization temperature manifestly minor addition (10°C 0.3 at.% B, and 25°C 1.1 B). reflectivity contrast between crystalline amorphous states undoped ranges from 29% wavelength 350 nm to 38% 800 With an optimal doping, exceeds 40% throughout whole visible range. distinct changes in refractive index extinction coefficient Ge40Sb10Te50Bx due crystallization is elucidated found be advantageous obtaining high contrast.