Phase change behavior in titanium-doped Ge2Sb2Te5 films
作者： S. J. Wei , H. F. Zhu , K. Chen , D. Xu , J. Li
DOI: 10.1063/1.3597617
关键词:
摘要: The titanium-doped Ge2Sb2Te5 films were deposited on Si(100) substrates by comagnetron sputtering method. titanium concentrations in those determined x-ray photoelectron spectroscopy. influence of Ti doping upon phase change characteristics the samples has been investigated diffraction and a temperature-regulable UVISEL™ typed spectroscopic ellipsometry. With augmentation concentration, crystalline temperatures went up while annealing, face-centered-cubic them had high thermal stability because bond making between Te elements partly.
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YoungKuk Kim, Uk Hwang, Yong Jai Cho, H. M. Park, M.-H. Cho, Pyeong-Seok Cho, Jong-Heun Lee, Change in electrical resistance and thermal stability of nitrogen incorporated Ge2Sb2Te5 films Applied Physics Letters. ,vol. 90, pp. 021908- ,(2007) , 10.1063/1.2431462
I. Friedrich, V. Weidenhof, W. Njoroge, P. Franz, M. Wuttig, Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements Journal of Applied Physics. ,vol. 87, pp. 4130- 4134 ,(2000) , 10.1063/1.373041
C. Cabral, K. N. Chen, L. Krusin-Elbaum, V. Deline, Irreversible modification of Ge2Sb2Te5 phase change material by nanometer-thin Ti adhesion layers in a device-compatible stack Applied Physics Letters. ,vol. 90, pp. 051908- ,(2007) , 10.1063/1.2450656
Chain-Ming Lee, Tsung-Shune Chin, Yi-Yuan Huang, I-Chung Tung, Tzen-Ren Jeng, Dong-Yao Chiang, Der-Ray Huang, Optical Properties of Ge40Sb10Te50Bx (x=0-2) Films. Japanese Journal of Applied Physics. ,vol. 38, pp. 6369- 6371 ,(1999) , 10.1143/JJAP.38.6369
T. Matsunaga, H. Morita, R. Kojima, N. Yamada, K. Kifune, Y. Kubota, Y. Tabata, J.-J. Kim, M. Kobata, E. Ikenaga, K. Kobayashi, Structural characteristics of GeTe-rich GeTe–Sb2Te3 pseudobinary metastable crystals Journal of Applied Physics. ,vol. 103, pp. 093511- ,(2008) , 10.1063/1.2901187
Tae Jin Park, Dae Hyun Kim, Sung Min Yoon, Kyu Jeong Choi, Nam Yeal Lee, Byoung Gon Yu, Se Young Choi, Phase Transition Characteristics and Device Performance of Sn-doped Ge2Sb2Te5in Phase Change Random Access Memory Japanese Journal of Applied Physics. ,vol. 45, pp. L1273- L1276 ,(2006) , 10.1143/JJAP.45.L1273
Seong-Min Jeong, Kyung-Ho Kim, Soon-Mok Choi, Hong-Lim Lee, Influence of Silicon Doping on the Properties of Sputtered Ge2Sb2Te5 Thin Film Japanese Journal of Applied Physics. ,vol. 48, pp. 045503- ,(2009) , 10.1143/JJAP.48.045503
Shenjin Wei, Jing Li, Xia Wu, Peng Zhou, Songyou Wang, Yuxiang Zheng, Liangyao Chen, Fuxi Gan, Xia Zhang, Guohua Li, Phase change characteristics of aluminum doped Ge_2Sb_2Te_5 films prepared by magnetron sputtering Optics Express. ,vol. 15, pp. 10584- 10590 ,(2007) , 10.1364/OE.15.010584
Bong-Sub Lee, John R. Abelson, Stephen G. Bishop, Dae-Hwan Kang, Byung-ki Cheong, Ki-Bum Kim, Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases Journal of Applied Physics. ,vol. 97, pp. 093509- ,(2005) , 10.1063/1.1884248
Martijn H. R. Lankhorst, Bas W. S. M. M. Ketelaars, R. A. M. Wolters, Low-cost and nanoscale non-volatile memory concept for future silicon chips. Nature Materials. ,vol. 4, pp. 347- 352 ,(2005) , 10.1038/NMAT1350