Influence of temperature on optical properties of electron-beam-evaporated ZnSe thin film
作者： H H Gullu , M Isik , N M Gasanly , M Parlak
关键词: Materials science 、 Direct and indirect band gaps 、 Photon energy 、 Attenuation coefficient 、 Thin film 、 Spectroscopy 、 Band gap 、 Analytical chemistry 、 Electron beam physical vapor deposition 、 Temperature coefficient
摘要: Structural and optical properties of ZnSe thin films grown by electron beam evaporation technique were reported in the present paper. X-ray diffraction pattern exhibited a single peak around 27o which is well-suited with cubic phase films. Energy dispersive spectroscopy analyses resulted atomic composition ratio Zn/Se nearly 1.0 corresponds to chemical formula ZnSe. Transmission experiments performed at various temperatures between 10 300 K. The transmission data showed that direct band gap energy increases from 2.72 2.83 eV as temperature was reduced K room temperature. Varshni O'Donnell-Chen models giving temperature-band relation used get parameters evaporated Analyses absolute zero eV, coefficient -5.8×10-4 eV/K average phonon 16 meV. Urbach tail state energies also calculated using absorption low photon region increasing 173 meV (300 K) 181 (10 decreasing ambient
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