Semiconductor device including capacitor and method of fabricating same
作者： Sang-Ryol Yang , Jin-Tae Noh , Ju-Wan Lim , Jae-Young Ahn , Jin-Gyun Kim
DOI:
关键词: Electrode 、 Materials science 、 Optoelectronics 、 Dielectric layer 、 Epitaxy 、 Layer (electronics) 、 Electrical engineering 、 Spark plug 、 Capacitor 、 Semiconductor device 、 Doping
摘要: A semiconductor device includes a capacitor having bottom electrode, dielectric layer formed on the top electrode layer, and contact plug metal that is connected with wherein doped poly-Si 1-x Ge x polysilicon epitaxially deposited makes layer.
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