Methods for enhancing capacitors having roughened features to increase charge-storage capacity
作者： Garry A. Mercaldi , Michael Nuttall , Randhir P. S. Thakur , Er-Xuan Ping , Shenline Chen
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摘要: Structures and methods for making a semiconductor structure are discussed. The includes rough surface having protrusions formed from an undoped silicon film. If the is capacitor, help to increase capacitance of capacitor. also relatively smooth abutting surface, wherein polycrystalline material.
google.de 参考文章(74)
Nicholas T. Schulz, Lawrence F. Kromer, George F. Vande Woude, Renping Zhou, Bsk receptor-like tyrosine kinase ,(1996)
Larry D. Fielder, Angela L. Rowland, Carton with glued liner incorporating an integral cell ,(1998)
Richard A. Livingston, Balanced charge pump capacitive material sensor ,(2000)
Thomas H. Baum, Steven M. Bilodeau, Michael W. Russell, Buskirk Peter C. Van, Chemical mechanical polishing of feram capacitors ,(1999)
Rajiv Jain, Mehul D. Shroff, Metal-to-metal antifuse with non-conductive diffusion barrier ,(1998)
Paul J. Schuele, Thomas M. Graettinger, Brent McClure, Capacitor, and methods for forming a capacitor ,(1998)
Klaus F. Schuegraf, Ronald A. Weimer, Randhir P. S. Thakur, Scott J. Deboer, DRAM capacitors made from silicon-germanium and electrode-limited conduction dielectric films ,(1996)
Byung-lyul Park, Jung-min Ha, Sang-in Lee, Dae-hong Ko, Method of manufacturing a capacitor and a capacitor electrode in semiconductor device ,(1997)
Naoki Kasai, Method of forming MOS transistors having gate insulators of different thicknesses ,(1995)