DRAM capacitors made from silicon-germanium and electrode-limited conduction dielectric films
作者： Klaus F. Schuegraf , Ronald A. Weimer , Randhir P. S. Thakur , Scott J. Deboer
DOI:
关键词: Tantalum pentoxide 、 Electronic engineering 、 Dielectric 、 Dynamic random-access memory 、 Tantalum capacitor 、 Silicon nitride 、 Electrode 、 Layer (electronics) 、 Capacitor 、 Optoelectronics 、 Materials science
摘要: An exemplary implementation of the present invention includes a capacitor for dynamic random access memory cell having first plate; second and dielectric layer interposed between said plates, with being dominated by electrode-limited conduction, which tantalum pentoxide silicon nitride, or combination two. In preferred implementation, one two plates is formed from silicon-germanium layer, plate metal pentoxide.
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