Method to form a corrugated structure for enhanced capacitance with plurality of boro-phospho silicate glass including germanium
作者： Randhir P. S. Thakur , Kirk D. Prall , Gordon Haller
DOI:
关键词: Semiconductor 、 Electronic engineering 、 Silicon 、 Etching (microfabrication) 、 BORO 、 Doping 、 Materials science 、 Capacitance 、 Composite material 、 Capacitor 、 Germanium
摘要: A method of forming a corrugated capacitor on semiconductor component. The the comprises series depositing alternating layers doped silicon glass having different etch rates component, covering with an etch-resistant material, and etching layers, thereby structure sides.
lens.org 参考文章(22)
Takashi Kawakubo, Noburu Fukushima, Kazuhide Abe, Thin-film capacitor device and RAM device using ferroelectric film ,(1998)
Thomas Chang, Liang-Choo Hsia, Single-side corrugated cylindrical capacitor structure of high density DRAMs ,(1997)
Phillip G. Wald, Guy Blalock, Stacked capacitor construction ,(1996)
Charles H. Dennison, Howard E. Rhodes, Hiang Chan, Yauh-Ching Liu, Pierre Fazan, Method for formation of a stacked capacitor ,(1990)
Gurtej Sandhu, Pierre C. Fazan, Method of forming a capacitor and a capacitor construction ,(2001)
Klaus F. Schuegraf, Ronald A. Weimer, Randhir P. S. Thakur, Scott J. Deboer, DRAM capacitors made from silicon-germanium and electrode-limited conduction dielectric films ,(1996)
David A. Cathey, Tyler A. Lowrey, Mark E. Tuttle, Method of increasing capacitance by surface roughening in semiconductor wafer processing ,(1997)
Stanley Wolf, Richard N. Tauber, Silicon Processing for the VLSI Era ,(1986)
Leonard Forbes, Joseph E. Geusic, Kie Y. Ahn, Circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same ,(1998)
Thomas Chang, Liang-Choo Hsia, Stacked capacitor having improved charge storage capacity ,(1996)