Method of manufacturing semiconductor integrated circuit with prevention of substrate warpage
作者： Takaya Suzuki , Akio Mimura , Shinji Okuhara , Seturo Yagyu
DOI:
关键词: Single crystal 、 Silicon nitride 、 Passivation 、 Materials science 、 Diffusion process 、 Oxygen 、 Integrated circuit 、 Silicon oxide 、 Semiconductor 、 Optoelectronics 、 Electronic engineering
摘要: In a monolithic semiconductor integrated circuit, when polycrystalline is used in portion of substrate insulatively supporting plural single crystal regions forming circuit elements, the oxidation process impurity diffusion at high temperatures and oxygen atmosphere started after passivation film such as silicon oxide or nitride, to prevent from diffusing penetrating into surface semiconductor, has been formed on same surface. By leaving lying that during warping may be caused due penetration region prevented.
lens.org 参考文章(9)
Theodore I Kamins, Method of obtaining high-quality thick films of polycrystalline silicone from dielectric isolation ,(1973)
Isamu Kobayashi, Oriented polycrystal jfet ,(1973)
F.H. Lee, Dielectrically isolated saturating circuits IEEE Transactions on Electron Devices. ,vol. 15, pp. 645- 650 ,(1968) , 10.1109/T-ED.1968.16422
Klaus Hennings, Hans-Jurgen Schutze, Gerhard Ulbricht, Electrical circuit manufacture ,(1966)
James B Price, Uryon S Davidson, Administrator By Amil J Ajamie, Fabrication of monocriptalline silicon on insulating substrates utilizing selective etching and deposition techniques ,(1973)
Clarence G Thornton, Microcircuits having buried conductive layers ,(1964)
H Camenzind, D Allison, Method for making bulk resistor and integrated circuit using the same ,(1971)