Plasma immersion ion implantation as an alternative deep trench buried-plate doping technology
作者： K. Lee , B. Lee , J. Hoepner , L. Economikos , C. Parks
关键词: Analytical chemistry 、 Doping 、 Plasma-immersion ion implantation 、 Silicon 、 Capacitor 、 Electrode 、 Trench 、 Optoelectronics 、 Ion implantation 、 Capacitance 、 Materials science
摘要: Plasma immersion ion implantation (PIII) has been developed as an alternative deep trench capacitor buried-plate doping technology and compared to a conventional solid-state diffusion technique using arsenosilicate glass (ASG). Novel top-down (or vertical) SIMS measurements demonstrated the conformal capability of PIII along sidewall. The level by was almost one order magnitude higher than that technique. As consequence, provided better depletion characteristics Furthermore, processing did not degrade node-to-buried plate leakage current characteristics. From these results, it is promising for future trench-based DRAM development.
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