Techniques for MRAM MTJ top electrode connection
作者： Cheng-Tai Hsiao , Cheng-Yuan Tsai , Hsun-Chung Kuang , Sheng-Chau Chen
DOI:
关键词: Electrode 、 Tunnel magnetoresistance 、 Materials science 、 Magnetoresistive random-access memory 、 Connection (principal bundle) 、 Substrate (printing) 、 Magnetoresistance 、 Interconnection 、 Edge (geometry) 、 Optoelectronics
摘要: Some embodiments relate to a memory device. The device includes magnetoresistive random-access (MRAM) cell disposed on substrate, the MRAM comprises magnetic tunnel junction (MTJ) between lower electrode and an upper electrode. A sidewall spacer arranged along opposite sidewalls of cell. An interconnect wire directly contacting surface interface continuously extending from first outer edge second spacer.
lens.org 参考文章(4)
Fu-Ting Sung, Chia-Shiung Tsai, Shih-Chang Liu, MRAM device and fabrication method thereof ,(2011)
Masayoshi Iwayama, Hiroyuki Kanaya, Magnetic memory and method for manufacturing the same ,(2014)
Seung Hyuk Kang, Xia Li, Matthew Michael Nowak, Mtj structure and integration scheme ,(2011)
Yen-Liang Lin, Chin-Hsun Hsiao, Yung-Lung Hsu, Chia-Yu Wei, Yi-Hsing Chu, 嘉余 魏, 益興 朱, 永隆 許, Shinkichi Chin, 信吉 陳, Semiconductor structure and method of manufacturing the same ,(2017)