Si-Substituted Ultrathin Ferroelectric Films

摘要: Solid solutions between Bi2SiO5 and conventional ferroelectric materials such as Bi4Ti3O12, SrBi2Ta2O9 Pb(Zr,Ti)O3 were formed using a sol-gel spin-coating method. It was found that the crystallization temperatures of films lower by 150 to 200°C than those original surface became very flat smooth. Because these excellent properties, ultrathin (13- 25-nm-thick) capacitors successfully fabricated, in which polarization well saturated at an applied voltage 0.5 V. Discussion on formation mechanism is also presented.