Preparation and Properties of Bi2SiO5/Si Structures

摘要: Bismuth silicate (Bi2SiO5) films, expected as the intermediate buffer layer between bismuth layer-structured ferroelectrics (BLSF) and silicon substrate, were prepared on (100)-oriented wafers by rf magnetron sputtering. The c-axis-oriented Bi2SiO5 films with smooth surface morphology obtained at substrate temperature of 400°C. leakage current density is order 10-10 Acm-2, under applied electric field less than 350 kVcm-1. From capacitance–voltage characteristics measurement results, it worth noting that hysteresis hardly observed. interface trap midgap estimated to be approximately 6 ×1012 cm-2eV-1. numerical evaluation results indicate metal-ferroelectric-insulator-semiconductor (MFIS) capacitor can reversed a low voltage. This suggests Bi4Ti3O12/Bi2SiO5/Si structures are suitable for application ferroelectric memory devices.