N-Ge-i-Ge-p-Si structural waveguide-type photoelectric detector based on LRC technology and manufacturing method

摘要: The invention relates to an n-Ge-i-Ge-p-Si structural waveguide-type photoelectric detector based on LRC technology and a manufacturing method. method comprises the following steps of SOI substrate; etching forming waveguide area, coupling structure device poriton top layer Si surface respectively; growing Ge material portion protection layer; heating whole substrate, using laser crystallize cooling making form crystallization layer, removing first second surface; passivation selective etch so as P-type contact hole N-type depositing metal in theP-type holes completing interconnection finally detector. In invention, by detector, dark currents can be reduced, aconflict high speed response quantum efficiency vertical light-entering-type optical is overcome, simultaneously are guaranteed.