作者: Xiaochen Sun , Ningning Feng , Dawei Zheng
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摘要: A Ge waveguide photo-detector fabricated on a silicon-on-insulator substrate is provided. It comprises detector end-coupled to light-signal-carrying silicon waveguide, both disposed (SOI) substrate. An electrical field established along the direction of light propagation inside by doping two opposite ends with P or N type dopants. In result height and width Si decoupled from speed detector.