Optically isolated photodiode for high sensitivity application

作者: Francois Pelletier

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摘要: An integrated silicon-based photo-detection system, fabricated in an silicon based structure on a silicon-on-insulator (SOI) wafer, includes photodiode isolated area surrounded by light barrier, where the barrier is SOI wafer removed, optical waveguide that guides input signal into photodiode, and external electrical traces free electron carriers flow as photocurrent. A method of fabricating system performing deep etching to create surrounding wirebonding connect remainder structure.

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