Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides
作者： Ning-Ning Feng , Po Dong , Dawei Zheng , Shirong Liao , Hong Liang
DOI: 10.1364/OE.18.000096
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摘要: We report a vertical p-i-n thin-film germanium photodetector integrated on 3μm thick large core silicon-on-insulator (SOI) waveguides. The device demonstrates very high external responsivity due to the low fiber coupling loss width and thickness are carefully designed achieve yet retain high-speed performance. Even with included, has demonstrated greater than 0.7A/W at 1550nm for TM polarization 0.5A/W TE polarization. A dark current of 0.2μA −0.5V bias is reported. 3dB bandwidths 12GHz 8.3GHz −2.5V also reported 100μm 200μm long devices, respectively. can cover communication wavelength spectrum up 1620nm relatively flat >0.5A/W. Further studies suggest that modified design capable achieving 1A/W both polarizations 30GHz bandwidth.
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