MIS‐Schottky theory under conditions of optical carrier generation in solar cells

摘要: The theory of MIS‐Schottky barriers and their electrical characteristics is examined for its application to solar cells. It found that the interface behavior contacts forward‐biased by illumination qualitatively different from same biased in dark an applied forward voltage. Observed increases due interfacial layer open‐circuit voltage cell cannot therefore be associated with ’’n value’’ measured current, but rather are effects this on transport properties majority minority carriers. predicts optimum thickness above which short‐circuit (minority‐carrier) current decreases, efficiency (fill factor) degraded.