作者: L. Leontie , I. Evtodiev , V. Nedeff , M. Stamate , M. Caraman
DOI: 10.1063/1.3035854
关键词: Optoelectronics 、 Impurity 、 Photoluminescence 、 Photon energy 、 Thermal treatment 、 Photosensitivity 、 Photoelectric effect 、 Heterojunction 、 Surface states 、 Materials science
摘要: Photoelectrical characteristics and photoluminescence of n-Bi2O3∕p-GaSe structures have been investigated. They show photosensitivity in the photon energy range 1.85–3.10eV. During thermal treatment heterojunction, Bi O atoms diffuse into GaSe layer, forming two impurity levels located at 0.101 0.429 eV above valence-band top GaSe.