Photoelectric properties of Bi2O3∕GaSe heterojunctions

作者: L. Leontie , I. Evtodiev , V. Nedeff , M. Stamate , M. Caraman

DOI: 10.1063/1.3035854

关键词: OptoelectronicsImpurityPhotoluminescencePhoton energyThermal treatmentPhotosensitivityPhotoelectric effectHeterojunctionSurface statesMaterials science

摘要: Photoelectrical characteristics and photoluminescence of n-Bi2O3∕p-GaSe structures have been investigated. They show photosensitivity in the photon energy range 1.85–3.10eV. During thermal treatment heterojunction, Bi O atoms diffuse into GaSe layer, forming two impurity levels located at 0.101 0.429 eV above valence-band top GaSe.

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