Sample variability and time stability in scaled silicon nanowires
作者： M. Pierre , X. Jehl , R. Wacquez , M. Vinet , M. Sanquer
DOI: 10.1109/ULIS.2009.4897583
关键词: Doping 、 Threshold voltage 、 CMOS 、 Nanotechnology 、 Optoelectronics 、 Silicon 、 Atomic orbital 、 Nanowire 、 Temperature cycling 、 Materials science 、 Quantum tunnelling
摘要: We explain variability observed for the resonant tunnelling transport through donors in scaled silicon nanowires by influence of charge configuration changes at edges between channel and source-drain regions. This is remarkably robust with respect to ageing effects, thermal cycling associated Id-Vg characteristics low temperature constitute a real “electro-fingerprint” samples. stability prerequisite applications based on gate control single donor orbitals nanoscale CMOS devices [1–2]
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