Manipulation of periodic Coulomb blockade oscillations in ultra-scaled memories by single electron charging of silicon nanocrystal floating gates
作者： G. Molas , X. Jehl , M. Sanquer , B. DeSalvo , D. Lafond
DOI: 10.1109/TNANO.2005.846898
关键词:
摘要: Ultra-scaled silicon nanocrystal memories fabricated on a silicon-on-insulator substrate exhibit very periodic Coulomb blockade oscillations at 4.2 K. We control the phase of those by charging and discharging floating gate with single electron. can distinguish between resonances due to whole channel area covered impurity levels localized in access regions less coupled gate. Comparison reference device without nanocrystals is also reported.
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sci-hub.se 参考文章(17)
Michel H. Devoret, Robert J. Schoelkopf, Amplifying quantum signals with the single-electron transistor Nature. ,vol. 406, pp. 1039- 1046 ,(2000) , 10.1038/35023253
Nobuyoshi Takahashi, Hiroki Ishikuro, Toshiro Hiramoto, Control of Coulomb blockade oscillations in silicon single electron transistors using silicon nanocrystal floating gates Applied Physics Letters. ,vol. 76, pp. 209- 211 ,(2000) , 10.1063/1.125704
Anri Nakajima, Toshiro Futatsugi, Kinjiro Kosemura, Tetsu Fukano, Naoki Yokoyama, Si single electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process Applied Physics Letters. ,vol. 71, pp. 353- 355 ,(1997) , 10.1063/1.119535
Y. T. Tan, T. Kamiya, Z. A. K. Durrani, H. Ahmed, Room temperature nanocrystalline silicon single-electron transistors Journal of Applied Physics. ,vol. 94, pp. 633- 637 ,(2003) , 10.1063/1.1569994
K. Nishiguchi, S. Oda, Self-aligned double-gate single-electron transistor derived from 0.12-μm-scale electron-beam lithography Applied Physics Letters. ,vol. 78, pp. 2070- 2072 ,(2001) , 10.1063/1.1360778
G. Molas, B. DeSalvo, G. Ghibaudo, D. Mariolle, A. Toffoli, N. Buffet, R. Puglisi, S. Lombardo, S. Deleonibus, Single electron effects and structural effects in ultrascaled silicon nanocrystal floating-gate memories IEEE Transactions on Nanotechnology. ,vol. 3, pp. 42- 48 ,(2004) , 10.1109/TNANO.2004.824016
J. R. Tucker, Complementary digital logic based on the ``Coulomb blockade'' Journal of Applied Physics. ,vol. 72, pp. 4399- 4413 ,(1992) , 10.1063/1.352206
C. W. J. Beenakker, Theory of Coulomb-blockade oscillations in the conductance of a quantum dot Physical Review B. ,vol. 44, pp. 1646- 1656 ,(1991) , 10.1103/PHYSREVB.44.1646
Lei Zhuang, Lingjie Guo, Stephen Y Chou, None, Silicon single-electron quantum-dot transistor switch operating at room temperature Applied Physics Letters. ,vol. 72, pp. 1205- 1207 ,(1998) , 10.1063/1.121014
Frank Stern, Evidence for a mobility edge in inversion layers Physical Review B. ,vol. 9, pp. 2762- 2765 ,(1974) , 10.1103/PHYSREVB.9.2762