The behavior of silicon p‐n junction‐based devices at liquid helium temperatures
作者： E. Simoen , B. Dierickx , L. Deferm , C. Claeys
DOI: 10.1063/1.349683
关键词: Condensed matter physics 、 Silicon 、 p–n junction 、 Liquid helium 、 Materials science 、 Cryogenics 、 Analytical chemistry 、 Hysteresis 、 Thermionic emission 、 Voltage 、 Diode
摘要: In this paper, the forward current‐voltage (I‐V) characteristics of Si p‐n junction diodes, fabricated in different state‐of‐the‐art complementary‐metal‐oxide‐semiconductor (CMOS) technologies, are investigated at liquid helium temperatures. As will be shown, three I‐V regimes can exist: a breakdown/hysteresis regime turn‐on voltage which may larger than built‐in potential junction; thermionic emission regime, corresponding to I=A exp(qV/kT) relation and high‐injection space‐charge‐limited giving rise current is proportional Vn. The anomalous behavior explained by considering small barrier for carrier injection, exists ‘‘ohmic’’ contact. It demonstrated that presence breakdown strongly determined fabrication technology used. extreme cases (large‐area well diodes) multiple observed, indicating an inhomogeneous, filamentary flow. sim...
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