A TEM study of the crystallography and defect structures of single crystal and polycrystalline copper indium diselenide
作者： C. J. Kiely , R. C. Pond , G. Kenshole , A. Rockett
DOI: 10.1080/01418619108205581
关键词: Materials science 、 Inelastic scattering 、 Diffraction 、 Stacking fault 、 Dislocation 、 Crystallite 、 Electron backscatter diffraction 、 Single crystal 、 Crystallography 、 Selected area diffraction
摘要: A TEM study of the crystallography and defect structure of the ternary compound semiconductor CuInSe 2 has been carried out. Single crystal samples grown by the vertical Bridgman …
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