摘要: The crystal structure, cleavage properties and phase relations of the ternary semiconductor CuInSe2 are first described. Then growth monocrystals this chalcopyrite from melt, with elements as starting materials, is reviewed a historical perspective. procedures for preferred Bridgman method described, which result in centimeter-size crystals within an ingot having uniform composition conductivity-type. also free adhesion to synthesizing ampoule and, addition, voids microcracks. electronic briefly discussed photovoltaic cells using p-type monocrystalline absorber substrates reviewed. Finally, progress made thin film polycrystalline based touched upon.
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J. N. Gan, J. Tauc, V. G. Lambrecht, M. Robbins, Optical properties of the(CuInSe2)1−x−(2ZnSe)xsystem Physical Review B. ,vol. 12, pp. 5797- 5802 ,(1975) , 10.1103/PHYSREVB.12.5797
J. L. Queisser, J. H. Wernick, Archibald L. Fripp, Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications Journal of The Electrochemical Society. ,vol. 123, ,(1976) , 10.1149/1.2132889
Harry Hahn, G�nter Frank, Wilhelm Klingler, Anne-Dorothee Meyer, Georg St�rger, Untersuchungen über ternäre Chalkogenide. V. Über einige ternäre Chalkogenide mit Chalkopyritstruktur Zeitschrift für anorganische und allgemeine Chemie. ,vol. 271, pp. 153- 170 ,(1953) , 10.1002/ZAAC.19532710307
R.R. Arya, T. Warminski, R. Beaulieu, M. Kwietniak, J.J. Loferski, W. Giriat, Photovoltaic and structural properties of CuInSe2/CdS solar cells Solar Energy Materials. ,vol. 8, pp. 471- 481 ,(1983) , 10.1016/0165-1633(83)90010-2
J. González, C. Rincón, A. Redondo, P. Negrete, Photodetecting Properties of CuInSe2Homojunctions Japanese Journal of Applied Physics. ,vol. 19, pp. 29- 32 ,(1980) , 10.7567/JJAPS.19S3.29
B. Tell, Sigurd Wagner, P. M. Bridenbaugh, Motion ofp‐njunctions in CuInSe2 Applied Physics Letters. ,vol. 28, pp. 454- 455 ,(1976) , 10.1063/1.88796
B. Tell, J. L. Shay, H. M. Kasper, Room‐Temperature Electrical Properties of Ten I‐III‐VI2 Semiconductors Journal of Applied Physics. ,vol. 43, pp. 2469- 2470 ,(1972) , 10.1063/1.1661532
H. Neumann, R. D. Tomlinson, N. Avgerinos, E. Nowak, Electrical properties of CuInSe2 single crystals grown by the vertical bridgman technique Physica Status Solidi (a). ,vol. 75, ,(1983) , 10.1002/PSSA.2210750265
I. Shih, A.Vahid Shahidi, C.H. Champness, Preparation of crystalline CuInSe2 by directional freezing Journal of Crystal Growth. ,vol. 70, pp. 411- 414 ,(1984) , 10.1016/0022-0248(84)90295-1
M. Hornung, K.W. Benz, L. Margulis, D. Schmid, H.W. Schock, Growth of bulk Cu0.85In1.05Se2 and characterization on a micro scale Journal of Crystal Growth. ,vol. 154, pp. 315- 321 ,(1995) , 10.1016/0022-0248(95)00203-0