Features of Bridgman-grown CuInSe2

摘要: Abstract Using a one-ampoule method, ingots of CuInSe 2 were grown by the vertical Bridgman technique with specific nonstoichiometric proportions starting elements copper, indium and selenium. With stoichiometry or an excess selenium, p-type. deficiency n-type conductivity was obtained but binary phases present, such as InSe, in last zone to freeze ingot. Ingots also prepared copper for melt compositions corresponding Cu x InSe , where 1.1, 1.2 1.3. In all these p-type ingots, precipitation occurred containing dissolved selenium indium. precipitate-free main part copper-excess no change electrical resistivity observed increased content. However, regions chalcopyrite adjacent precipitated areas, at end each ingot, apparently increased.