Pulsed laser deposition of ferroelectric thin films for active microwave electronic devices

摘要: High quality thin films of SrxBa(1-x)TiO3 are currently being grown using pulsed laser deposition (PLD). These used for the construction frequency tunable microwave electronic devices. In particular, a low phase noise, voltage controlled oscillator (1.5 - 2.5 GHz) is developed. Single and oriented have been deposited by PLD onto (100) LaAlO3 MgO single crystal Ag films. The dielectric properties these has measured at 1 MHz between 20 GHz. A 75% change in capacitance can be achieved 40 V bias across 5 micrometer interdigital capacitor gap (80 kV/cm). dissipation factor (measured MHz) depends on film composition temperature. Dielectric loss measurement GHz shown tangent as small 1.25 multiplied 10-2.© (1997) COPYRIGHT SPIE--The International Society Optical Engineering. Downloading abstract permitted personal use only.