Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: role of surface effects
作者： Congyong Zhu , Fan Zhang , Romualdo A Ferreyra , Xing Li , Cemil Kayis
DOI: 10.1117/12.2000558
关键词: Noise (electronics) 、 Materials science 、 Transconductance 、 Optoelectronics 、 Heterojunction 、 Capacitance 、 Microwave 、 Cutoff frequency 、 Field-effect transistor 、 Gallium nitride
摘要: ABSTRACT In an effort to investigate the particulars of their stability, 18.5% Al 81.5% N/GaN HFETs were subjected on-state electrical stress for intervals totaling up 20 hours. The current gain cutoff frequency f T showed a constant increase after each incremental stress, which was consistent with decreased gate lag and phase noise. Extraction small-signal circuit parameters demonstrated that is due decrease in gate-source capacitance (C gs ) gate-drain ( C gd as well increased microwave transconductance g m ). All these behaviors are diminishing extension (virtual gate) around area. INTRODUCTION x 1-x based heterojunction field effect transistors (HFETs) candidates next generation high-power high-frequency amplifiers 1 , owing large two-dimensional electron gas (2DEG) heterostructure spontaneous polarization charge at InAlN/GaN interface. Moreover, same time InAlN layer can be grown lattice-matched underlying GaN indium composition between 17% 18%
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