Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects
作者： CY Zhu , M Wu , C Kayis , F Zhang , X Li
DOI: 10.1063/1.4751037
关键词:
摘要: In15.7%Al84.3%N/AlN/GaN heterojunction field effect transistors have been electrically stressed under four different bias conditions: on-state-low-field stress, reverse-gate-bias off-state-high-field and on-state-high-field in an effort to elaborate on hot electron/phonon thermal effects. DC current phase noise measured before after the stress. The possible locations of failures as well their influence electrical properties identified. stress causes trap generation around gate area near surface which has indirect channel. induce deterioration channel, reduce drain increase noise. channel degradation is ascribed hot-electron hot-phonon
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