作者: Tolis Voutsas
DOI:
关键词: Nanocrystalline silicon 、 Polycrystalline silicon 、 Optoelectronics 、 Monocrystalline silicon 、 Oxide thin-film transistor 、 Amorphous silicon 、 Silicon 、 Materials science 、 Crystallography 、 Thin-film transistor 、 Strained silicon
摘要: A method is provided of fabricating a thin film transistor semiconductor polycrystalline silicon on transparent substrate suitable for the manufacture liquid crystal display. substantially amorphous placed substrate. Suspended in are small seed crystals. As annealed, grains, begun from crystals, formed resulting silicon. The crystals help regulate annealment process, and reduce process dependence precision deposition heating methods. use also helps ensure that grains both large consistent size. Large promote to production TFTs with high electron mobility uniform performance across entire LCD.