Method for forming polycrystalline silicon from the crystallization of microcrystalline silicon

作者: Tolis Voutsas

DOI:

关键词: Nanocrystalline siliconPolycrystalline siliconOptoelectronicsMonocrystalline siliconOxide thin-film transistorAmorphous siliconSiliconMaterials scienceCrystallographyThin-film transistorStrained silicon

摘要: A method is provided of fabricating a thin film transistor semiconductor polycrystalline silicon on transparent substrate suitable for the manufacture liquid crystal display. substantially amorphous placed substrate. Suspended in are small seed crystals. As annealed, grains, begun from crystals, formed resulting silicon. The crystals help regulate annealment process, and reduce process dependence precision deposition heating methods. use also helps ensure that grains both large consistent size. Large promote to production TFTs with high electron mobility uniform performance across entire LCD.

参考文章(7)
Yoshio Manabe, Ichiro Tanahashi, Tsuneo Mitsuyu, Nonlinear optical materials and their manufacturing method ,(1994)
P. Baeri, G. Foti, J. M. Poate, A. G. Cullis, Phase Transitions in Amorphous Si Produced by Rapid Heating Physical Review Letters. ,vol. 45, pp. 2036- 2039 ,(1980) , 10.1103/PHYSREVLETT.45.2036
Hiroyuki Kuriyama, Tomoyuki Nohda, Yoichirou Aya, Takashi Kuwahara, Kenichiro Wakisaka, Seiichi Kiyama, Shinya Tsuda, Comprehensive Study of Lateral Grain Growth in Poly-Si Films by Excimer Laser Annealing and Its Application to Thin Film Transistors Japanese Journal of Applied Physics. ,vol. 33, pp. 5657- 5662 ,(1994) , 10.1143/JJAP.33.5657
Fumiaki Funada, Tatsuo Morita, Hongyong Zhang, Hirohisa Tanaka, Toru Takayama, Method of manufacturing semiconductor device having different orientations of crystal channel growth ,(1995)
Hiroshi Iwata, Shigeru Noguchi, Keiichi Sano, Method of forming crystalline silicon film and solar cell obtained thereby ,(1993)